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KMID : 1059519950390010001
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Journal of the Korean Chemical Society
1995 Volume.39 No. 1 p.1 ~ p.6
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Acid Etching of Sapphire Substrate for Hetero-Epitaxial Growth
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Kim Hyang-Sook
Hwang Jin-Soo
Chong Paul-Joe
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Abstract
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The surface of a sapphire substrate used for hetero-epitaxy was chemically polished in a mixture of H3PO4 and H2SO4 solution. The extent of etching for various crystal orientations was found to be dependent on the etching time at 315±2℃ and at the composition of H2SO4 : H3PO4=3 : 1. In addition, the etching rates of the substrates were investigated in the mixture of H2SO4 : H3PO4=3 :1 by volume and in the temperature range of 280~320℃. From the plot of log R against 1/T, the activation penergy (Ea) was found to be in the order of (1012) > (1010) > (1120) > (0001) plane. After removing the surface layers of the sapphire with (0001), (1012), (1010) and (1120) plane by a thickness of 64.6, 46.5, 16.2 and 5.1 μm, respectively, the morphology of the resultingsurface was observed by SEM.
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